PBSS5130T NXP Semiconductors, PBSS5130T Datasheet
PBSS5130T
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PBSS5130T Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PBSS5130T PNP low V Product specification M3D088 (BISS) transistor CEsat www.DataSheet4U.com 2003 Dec 12 ...
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... CEO CRP R CEsat PINNING handbook, halfpage Top view (1) Fig.1 Simplified outline (SOT23) and symbol. 2 www.DataSheet4U.com Product specification PBSS5130T PARAMETER MAX. collector-emitter voltage 30 collector current (DC) 1 repetitive peak collector 1.5 current equivalent on-resistance 220 PIN DESCRIPTION 1 base 2 emitter 3 ...
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... PACKAGE DESCRIPTION plastic surface mounted package; 3 leads CONDITIONS open emitter open base open collector amb note 1 note 2 CONDITIONS in free air note 1 note 2 3 www.DataSheet4U.com Product specification PBSS5130T VERSION SOT23 MIN. MAX. UNIT 300 mA 300 ...
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... 100 100 mA 100 MHz MHz www.DataSheet4U.com Product specification PBSS5130T MIN. TYP. MAX. UNIT 100 100 nA 300 450 260 350 210 290 100 mV 225 mV 220 m 0.75 ...
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... OUTLINE VERSION IEC SOT23 2003 Dec scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB 5 www.DataSheet4U.com Product specification PBSS5130T detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION SOT23 A M 97-02-28 99-09-13 ...
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... Product specification PBSS5130T DEFINITION These products are not Philips Semiconductors ...
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...