PBSS5520X NXP Semiconductors, PBSS5520X Datasheet - Page 2

• Manufacturer Part Number: PBSS5520X
• Description: 20V 5A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP low V
plastic package.
NPN complement: PBSS4520X.
MARKING
Note
1. * = p: made in Hong Kong.
ORDERING INFORMATION
2004 Nov 08
PBSS5520X
PBSS5520X
High h
High collector current I
High efficiency leading to less heat generation.
Medium power peripheral drivers (e.g. fans and motors)
Strobe flash units for digital still cameras and mobile
phones
Power switch for LAN and ADSL systems
Medium power DC-to-DC conversion
Battery chargers
Supply line switching.
20 V, 5 A
PNP low V
* = t: made in Malaysia.
* = W: made in China.
TYPE NUMBER
TYPE NUMBER
FE
CEsat
and low V
(BISS) transistor in a SOT89 (SC-62)
CEsat
CEsat
C
: 5 A
at high current operation
(BISS) transistor
MARKING CODE
NAME
SC-62
*1K
plastic surface mounted package; collector pad for
good heat transfer; 3 leads
(1)
2
QUICK REFERENCE DATA
PINNING
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PIN
DESCRIPTION
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
PACKAGE
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
emitter
collector
base
3
PARAMETER
2
DESCRIPTION
1
www.DataSheet4U.com
Product specification
PBSS5520X
3
sym079
54
MAX.
20
5
10
VERSION
2
1
SOT89
V
A
A
m
UNIT