VEC2813 Sanyo Semicon Device, VEC2813 Datasheet
VEC2813
Related parts for VEC2813
VEC2813 Summary of contents
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... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2813 SANYO Semiconductors MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...
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... Reverse Recovery Time Package Dimensions unit : mm (typ) 7012-004 0 0.65 2.9 VEC2813 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GSS = 8V = (off =10V =1mA yfs V DS =10V =1. (on =1.5A = (on ...
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... Drain-to-Source Voltage (on 150 100 Gate-to-Source Voltage VEC2813 t rr Test Circuit [SBD] Duty 10 =1. =6. OUT 10 s VEC2813 [MOSFET =1.0V 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT10933 [MOSFET] Ta= IT10935 50 100 10 -- ...
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... Drain Current 4 =10V I D =3A 3.5 3.0 2.5 2.0 1.5 1.0 0 Total Gate Charge 1.0 0.8 0.6 0.4 0 Ambient Temperature VEC2813 [MOSFET 1.0 IT10937 [MOSFET =10V (on 1.0 10 IT03496 [MOSFET ...
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... Average Forward Current FSM -- t 14 Current waveform 50Hz sine wave 0. 0.1 Time VEC2813 [SBD] 0.0001 0.25 0.30 0.35 0.40 0.45 0.50 IT08568 [SBD] (2) (4) (3) (1) 1.5 2.0 2.5 IT08571 [SBD 20ms ...
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... Note on usage : Since the VEC2813 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...