VEC2813 Sanyo Semicon Device, VEC2813 Datasheet - Page 4

• Manufacturer Part Number: VEC2813
• Description: N-Channel Silicon MOSFET / Schottky Barrier Diode
• Manufacturer: Sanyo Semicon Device

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100
1.0
1.0
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.0
0.8
0.6
0.4
0.2
10
10
0.01
3
2
7
5
3
2
7
5
3
2
0
0
3
2
7
5
3
2
7
5
3
2
0.1
0
0
V DS =10V
I D =3A
V DS = 10 V
2
1
20
2
3
2
5
Ambient Temperature, Ta -- C
3
40
Total Gate Charge, Qg -- nC
7
3
0.1
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
5
60
V GS -- Qg
y
4
P D -- Ta
2
7
fs
3
1.0
80
5
-- I D
5
t d (on)
7
6
100
1.0
2
7
120
2
3
3
8
[MOSFET]
[MOSFET]
V DD =10V
V GS = 4 V
[MOSFET]
[MOSFET]
5
140
5
IT10937
IT03496
IT03498
IT10953
9
7
7
160
10
10
10
VEC2813
0.001
1000
0.01
0.01
100
1.0
0.1
1.0
0.1
10
10
10
7
5
3
2
7
5
3
2
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
I DP =12A
I D =3A
2 3
2
Operation in this
area is limited by R DS (on).
Ciss, Coss, Crss -- V DS
0.2
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
5 7
Diode Forward Voltage, V SD -- V
0.1
6
0.4
2 3
I S -- V SD
8
A S O
0.6
5 7 1.0
10
12
0.8
2
2
14
3
0.8mm)
5 7 10
16
No. A0384-4/6
[MOSFET]
[MOSFET]
[MOSFET]
PW 10 s
1.0
V GS =0V
f=1MHz
18
IT03497
IT10938
IT10952
2 3
1.2
20
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