VEC2813 Sanyo Semicon Device, VEC2813 Datasheet - Page 3

• Manufacturer Part Number: VEC2813
• Description: N-Channel Silicon MOSFET / Schottky Barrier Diode
• Manufacturer: Sanyo Semicon Device

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Switching Time Test Circuit
[MOSFET]
P.G
4V
0V
PW=10 s
D.C. 1%
150
100
50
3
2
1
0
0
V IN
0
0
0.1
V IN
0.2
Drain-to-Source Voltage, V DS -- V
2
G
50
Gate-to-Source Voltage, V GS -- V
0.3
R DS (on) -- V GS
V DD =10V
D
I D -- V DS
0.4
4
S
I D =1.5A
R L =6.67
0.5
VEC2813
0.6
6
V OUT
0.7
V GS =1.0V
0.8
8
[MOSFET]
[MOSFET]
Ta=25 C
0.9
IT10933
IT10935
VEC2813
1.0
10
t rr Test Circuit
[SBD]
Duty 10%
10 s
50
150
100
50
--100
3
2
1
0
0
0
V DS =10V
--5V
0.2
--50
100
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
0.4
R DS (on) -- Ta
0
0.6
I D -- V GS
10
0.8
50
1.0
100
1.2
t rr
No. A0384-3/6
[MOSFET]
[MOSFET]
150
1.4
IT10934
IT10936
1.6
200
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