HN1K04FU Toshiba Semiconductor, HN1K04FU Datasheet - Page 3

• Manufacturer Part Number: HN1K04FU
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
• Manufacturer: Toshiba Semiconductor

(Q1, Q2 common)
0.05
0.03
0.01
100
0.5
0.3
0.1
60
50
40
30
20
10
50
30
10
50
30
10
5
3
1
5
3
0.5
0
0
4.0
Common
source
V DS = 5 V
Ta = 25°C
-0.2
3.0
1
Drain-source voltage V
Drain-source voltage V
2
-0.4 -0.6 -0.8
Drain current I
4
3
I
ïY
I
DR
D
5
2.7
fs
– V
V GS = 2.1 V
– V
ï – I
6
-1.0 -1.2
DS
10
DS
1.8
D
D
G
Common source
V GS = 0
Ta = 25°C
2.4
Common source
Ta = 25°C
8
(mA)
DS
DS
-1.4 -1.6
30
D
S
(V)
(V)
1.5
10
50
I
DR
-1.8
100
12
3
0.05
0.03
0.01
100
1.2
1.0
0.8
0.6
0.4
0.2
0.5
0.3
0.1
0.5
0.3
50
30
10
50
30
10
0
5
3
1
5
3
1
0.1
0
0
Ta = 100°C
1
4.0
2.0
1.8
0.1
Drain-source voltage V
Drain-source voltage V
Drain-source voltage V
0.3 0.5
2
25
-25
I
0.2
D
3
1
– V
I
C – V
D
1.7
4
DS
– V
0.3
GS
(low voltage region)
DS
3
5
V GS = 1.6 V
Common source
V DS = 5 V
5
0.4
Common source
Ta = 25°C
6
Common source
V GS = 0
f = 1 MHz
Ta = 25°C
DS
GS
DS
10
1.65
1.55
1.5
7
(V)
(V)
(V)
0.5
HN1K04FU
C oss
C iss
C rss
8
2002-01-16
30
0.6
9
50