DIM600BSS12-E000 Dynex Semiconductor, DIM600BSS12-E000 Datasheet
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DIM600BSS12-E000
Related parts for DIM600BSS12-E000
DIM600BSS12-E000 Summary of contents
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... The DIM600BSS12-E000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM600BSS12-E000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Clearance: 11mm CTI (Critical Tracking Index): 425 Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting - M6 Electrical connections - M6 Electrical connections - M6 DIM600BSS12-E000 Min. Typ. Max 150 - - 125 – ...
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... DIM600BSS12-E000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol Collector cut-off current I CES Gate leakage current I GES Gate threshold voltage V GE(TH) V Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM V Diode forward voltage F Input capacitance ...
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... Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy REC Note: Switching Characteristic measurements taken using standard driver circuit conditions. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS12-E000 Test Conditions Min 600A - 15V - GE V ...
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... DIM600BSS12-E000 TYPICAL CHARACTERISTICS 1200 Common emitter T = 25°C 1100 case 1000 900 800 700 600 500 400 300 200 100 0 0.0 0.5 1.0 1.5 2.0 Collector voltage, V Fig. 3 Typical output characteristics 210 Conditions 125ºC case R = 3.6 ohms g(on) 180 R = 1.2 ohms g(off 600V cc 150 120 ...
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... F 1000 100 10 1 800 1000 1200 1400 0.001 - (V) R DIM600BSS12-E000 T = 125˚C case V = ±15V 1.2 Ohms g Module I C Chip I C 200 400 600 800 1000 Collector emitter voltage (V) ce Fig. 8 IGBT reverse bias safe operating area ...
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... DIM600BSS12-E000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Nominal weight: 475g Module outline type code: B Fig ...
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... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...