DIM600BSS12-E000 Dynex Semiconductor, DIM600BSS12-E000 Datasheet - Page 5

• Manufacturer Part Number: DIM600BSS12-E000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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ELECTRICAL CHARACTERISTICS
T
T
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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case
case
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
E
t
t
E
Q
Q
Q
d(off)
d(on)
d(off)
d(on)
I
I
t
OFF
t
REC
t
OFF
t
REC
ON
ON
rr
rr
f
r
f
r
rr
rr
g
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Parameter
Parameter
I
I
F
F
= 600A, V
dI
= 600A, V
dI
Test Conditions
Test Conditions
R
F
R
F
R
R
/dt = 4400A/ s
/dt = 4800A/ s
V
V
V
V
G(OFF)
G(OFF)
G(ON)
G(ON)
I
L ~ 70nH
L ~ 70nH
GE
GE
CE
C
CE
I
C
= 600A
= 600A
= 15V
= 600V
= 15V
= 600V
= 3.6
= 3.6
= 1.8
= 1.8
R
R
= 600V,
= 600V,
Min.
Min.
DIM600BSS12-E000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
700
150
250
120
440
550
100
200
120
360
95
80
90
36
62
60
45
18
6
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C
C
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