DIM600BSS12-E000 Dynex Semiconductor, DIM600BSS12-E000 Datasheet - Page 6

• Manufacturer Part Number: DIM600BSS12-E000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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DIM600BSS12-E000
TYPICAL CHARACTERISTICS
6/9
1200
1100
1000
210
180
150
120
900
800
700
600
500
400
300
200
100
90
60
30
Fig. 5 Typical switching energy vs collector current
0
0
0.0
0
Common emitter
Conditions:
T
R
R
V
T
case
g(on)
g(off)
cc
case
= 600V
0.5
Fig. 3 Typical output characteristics
= 125ºC
= 3.6 ohms
= 1.2 ohms
= 25°C
300
1.0
Collector voltage, V
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1.5
600
2.0
2.5
C
ce
- (A)
- (V)
900
3.0
V
V
V
V
GE
GE
GE
GE
3.5
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
1200
4.0
1200
1100
1000
300
270
240
210
180
150
120
900
800
700
600
500
400
300
200
100
90
60
30
Fig. 6 Typical switching energy vs gate resistance
0
0
0
Conditions:
T
I
V
C
Common emitter
case
cc
T
= 600A
case
= 600V
0.5
Fig. 4 Typical output characteristics
= 125ºC
= 125°C
1.0
Gate resistance, R
1.5
Collector voltage, V
5
2.0
2.5
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g
3.0
- (ohms)
ce
10
- (V)
3.5
4.0
V
V
V
V
GE
GE
GE
GE
4.5
= 10V
= 12V
= 15V
= 20V
E
E
E
on
off
rec
15
5.0