DIM600BSS12-E000 Dynex Semiconductor, DIM600BSS12-E000 Datasheet - Page 2

• Manufacturer Part Number: DIM600BSS12-E000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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DIM600BSS12-E000
ABSOLUTE MAXIMUM RATINGS
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
2/9
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
= 25˚C unless stated otherwise
V
V
I
P
V
Q
C(PK)
I
I
CES
GES
max
2
isol
C
PD
t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
Isolation voltage - per module
Partial discharge - per module
2
t value
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
V
T
1ms, T
T
V
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
case
case
GE
R
= 0, t
= 0V
= 80˚C
= 25˚C, T
case
p
= 10ms, T
= 110˚C
1
= 1300V, V
j
= 150˚C
vj
= 125˚C
Test Conditions
2
= 1000V, 50Hz RMS
-
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Max.
1200
1200
2.75
600
2.5
45
10
20
Units
kA
kW
pC
kV
V
V
A
A
2
s