DIM600BSS12-E000 Dynex Semiconductor, DIM600BSS12-E000 Datasheet - Page 3

• Manufacturer Part Number: DIM600BSS12-E000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

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THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Creepage distance:
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Symbol
R
R
R
T
th(c-h)
th(j-c)
th(j-c)
T
-
stg
j
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Al
Cu
20mm
2
O
3
Parameter
Clearance:
CTI (Critical Tracking Index):
11mm
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting - M6
Electrical connections - M6
Electrical connections - M6
425
Test Conditions
-
Min.
DIM600BSS12-E000
–40
2.5
1.1
3
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
Max.
150
125
125
45
80
15
5
5
2
˚C/kW
˚C/kW
˚C/kW
Units
Nm
Nm
Nm
˚C
˚C
˚C
3/9