NUS5531MT ON Semiconductor, NUS5531MT Datasheet
NUS5531MT
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NUS5531MT Summary of contents
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... Device Package Shipping NUS5531MTR2G WDFN8 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NUS5531MT/D I MAX D −6 MAX C −2.0 A † ...
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P−Channel Power MOSFET Maximum Ratings Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 3) Pulsed Drain Current Operating Junction and Storage Temperature Operating Case Temperature (Note 3) ...
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P−Channel MOSFET Electrical Characteristics Parameter CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE ...
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Single−PNP Transistor Electrical Characteristics Parameter OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Emitter−Base Breakdown Voltage Collector−Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note 7) DC Current Gain (Note 7) Collector−Emitter Saturation Voltage Collector−Emitter Saturation Voltage Collector−Emitter Saturation Voltage ...
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−V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 3. On−Region Characteristics 0. 4 0.04 0.03 0. −I , DRAIN CURRENT ...
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2400 C iss 2000 1600 1200 C rss 800 C oss 400 0 −4 − −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Capacitance ...
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D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1E−06 1E−05 www.DataSheet4U.com TYPICAL CHARACTERISTICS − MOSFET 1E−04 1E−03 1E−02 t, TIME (s) Figure 14. FET Thermal Response http://onsemi.com 7 1E−01 1E+00 1E+01 1E+02 1E+03 ...
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IC/ 0.2 0.15 0.1 0.05 0 0.001 0. COLLECTOR CURRENT (A) C Figure 15. Collector Emitter Saturation Voltage vs. Collector Current 600 150°C (5.0 V) 550 150°C (2.0 V) 500 450 400 25°C (5.0 V) ...
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V , EMITTER BASE VOLTAGE (V) EB Figure 21. Input Capacitance www.DataSheet4U.com TYPICAL CHARACTERISTICS − BJT 170 C (pF) ibo 150 130 110 3.0 ...
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... PITCH DIMENSIONS: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NUS5531MT/D ...