NUS5531MT ON Semiconductor, NUS5531MT Datasheet - Page 8
NUS5531MT
Manufacturer Part Number
NUS5531MT
Description
Main Switch Power MOSFET and Single Charging BJT
Manufacturer
ON Semiconductor
Datasheet
1.NUS5531MT.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NUS5531MTR2G
Manufacturer:
ON/安森美
Quantity:
20 000
www.DataSheet4U.com
600
550
500
450
400
350
300
250
200
150
100
0.25
0.15
0.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0.001
0.001
0
Figure 15. Collector Emitter Saturation Voltage
0.001
150°C (5.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
Figure 19. Base Emitter Turn−On Voltage vs.
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
V
Figure 17. DC Current Gain vs. Collector
IC/IB = 10
CE
= −2.0 V
0.01
I
C
0.01
I
0.01
I
, COLLECTOR CURRENT (A)
C
C
, COLLECTOR CURRENT (A)
vs. Collector Current
, COLLECTOR CURRENT (A)
Collector Current
150°C
−55°C
25°C
Current
0.1
0.1
0.1
TYPICAL CHARACTERISTICS − BJT
25°C
1.0
1.0
1.0
150°C
http://onsemi.com
−55°C
10
10
10
8
0.35
0.25
0.15
0.05
0.3
0.2
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.001
0.001
0
0
0.01
Figure 16. Collector Emitter Saturation Voltage
Figure 18. Base Emitter Saturation Voltage vs.
IC/IB = 10
IC/IB = 100
10 mA
100 mA
−55°C
150°C
Figure 20. Saturation Region
25°C
0.01
0.01
I
I
C
C
0.1
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
vs. Collector Current
B
, BASE CURRENT (mA)
Collector Current
0.1
0.1
1.0
I
C
150°C
= 500 mA
300 mA
−55°C
1.0
1.0
10
25°C
100
10
10