NUS5531MT ON Semiconductor, NUS5531MT Datasheet - Page 3

• Manufacturer Part Number: NUS5531MT
• Description: Main Switch Power MOSFET and Single Charging BJT
• Manufacturer: ON Semiconductor

www.DataSheet4U.com
5. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 sq in [1 oz] including traces)
6. Surface−mounted on FR4 board using 50 sq mm pad size, 1 oz. Cu.
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS
DRAIN−SOURCE DIODE CHARACTERISTICS
P−Channel MOSFET Electrical Characteristics
Single−PNP Transistor Maximum Ratings
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Forward Recovery Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current, Continuous
Collector Current, Peak
Operating Junction and Storage Temperature
Power Dissipation, T
Thermal Resistance (Note 5)
Power Dissipation, T
Thermal Resistance (Note 6)
Parameter
A
A
= 25°C (Note 5)
= 25°C (Note 6)
Parameter
Symbol
Q
Q
C
C
t
t
(T
C
Q
Q
Q
V
d(on)
d(off)
G(tot)
OSS
RSS
G(th)
t
t
t
ISS
t
t
SD
GS
GD
RR
J
rr
a
b
r
f
= 25°C unless otherwise stated)
(T
http://onsemi.com
J
= 25°C unless otherwise specified)
V
I
V
V
S
GS
GS
GS
V
= −1.0 A
I
GS
3
D
dISD/dt = 100 A/ms,
= −4.5 V, V
= −4.5 V, V
= 0 V,
= −3.0 A, R
Test Condition
= 0 V, f = 1.0 MHz,
V
I
I
V
D
DS
S
GS
= −3.0 A
= −1.0 A
= −12 V
= 0 V,
DS
DD
T
G
T
J
J
= −12 V,
= −12 V,
= 3.0
= 125°C
= 25°C
T
Symbol
J
V
V
V
R
R
, T
P
Min
P
CEO
CBO
EBO
I
I
qJA
qJA
C
C
D
D
STG
−0.66
−0.54
1329
17.5
56.5
70.8
14.3
56.4
Typ
200
116
1.1
1.7
2.5
13
80
44
8
−55 to 150
Value
0.43
−7.0
−2.0
−4.0
1.58
61.5
−20
−20
293
Max
−1.2
Units
°C/W
°C/W
Unit
nC
nC
pF
ns
ns
°C
W
W
V
V
V
V
A
A