NUS5531MT ON Semiconductor, NUS5531MT Datasheet - Page 4
NUS5531MT
Manufacturer Part Number
NUS5531MT
Description
Main Switch Power MOSFET and Single Charging BJT
Manufacturer
ON Semiconductor
Datasheet
1.NUS5531MT.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NUS5531MTR2G
Manufacturer:
ON/安森美
Quantity:
20 000
www.DataSheet4U.com
7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
8. Guaranteed by design but not tested.
OFF CHARACTERISTICS
ON CHARACTERISTICS
Single−PNP Transistor Electrical Characteristics
Base−Emitter Saturation Voltage
(Note 7)
Base−Emitter Turn−On Voltage
(Note 7)
Cutoff Frequency (Note 8)
Input Capacitance (Note 8)
Output Capacitance (Note 8)
Collector−Emitter Breakdown
Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Emitter Cutoff Current
DC Current Gain (Note 7)
DC Current Gain (Note 7)
Collector−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
from Wall/USB
from Wall/USB
Parameter
Voltage
Supply
V
DD
R_sns
Symbol
V
V
V
V
Vbr
Vbr
Vbr
V
CE(sat)
CE(sat)
CE(sat)
BE(sat)
C
I
BE(on)
C
h
h
CES
f
obo
FE
FE
T
ibo
CEO
CBO
EBO
Figure 2. Typical Application Circuit
1
2
3
4
http://onsemi.com
(T
I
J
C
V
I
I
V
I
I
C
C
= 25°C unless otherwise stated)
C
I
I
C
I
= −100 mA, V
EB
CB
C
C
C
= −1.0 A, V
= −2.0 A, V
I
I
= −1.0 A, I
= −1.0 A, I
I
C
E
= −1.0 A, I
= −2.0 A, I
= −1.0 A, I
C
= −0.5 V, f = 1.0 MHz
= −3.0 V, f = 1.0 MHz
Test Condition
= −0.1 mA, I
= −0.1 mA, I
4
= −10 mA, I
V
f = 100 MHz
CES
= −15 V
B
B
CE
CE
B
B
B
CE
= −0.01 A
= −0.01 A
= −0.1 A
= −0.2 A
= −2.0 A
= −2.0 V
= −2.0 V
B
E
C
= −5.0 V
= 0
= 0
= 0
8
7
6
5
−7.0
Min
−20
−20
180
150
100
CHR/USB_ctl
N/C
BAT_FET_N
−0.065
−0.10
−0.13
Typ
Main Battery
−0.12
−0.09
−0.18
Max
−0.1
−0.9
−0.9
330
100
Units
MHz
mA
pF
pF
V
V
V
V
V
V
V
V
−
−