NUS5531MT ON Semiconductor, NUS5531MT Datasheet - Page 5
NUS5531MT
Manufacturer Part Number
NUS5531MT
Description
Main Switch Power MOSFET and Single Charging BJT
Manufacturer
ON Semiconductor
Datasheet
1.NUS5531MT.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NUS5531MTR2G
Manufacturer:
ON/安森美
Quantity:
20 000
www.DataSheet4U.com
0.05
0.04
0.03
0.02
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
0
−50
0
1
Figure 5. On−Resistance vs. Drain Current
V
I
V
GS
Figure 7. On−Resistance Variation with
D
−25
GS
Figure 3. On−Region Characteristics
−V
= −3 A
= 4.5 V
1
= −4.5 V
DS
T
2
J
−1.7 − −8.0 V
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
−I
D
2
, DRAIN CURRENT (A)
Temperature
25
3
T
T
T
J
J
J
3
50
= 100°C
= −55°C
= 25°C
TYPICAL CHARACTERISTICS − MOSFET
4
75
4
100
T
V
J
GS
= 25°C
5
5
= −1.4 V
−1.6 V
−1.5 V
http://onsemi.com
125
6
6
150
5
10,000
1,000
0.05
0.04
0.03
0.02
100
6
5
4
3
2
1
0
0.5
2
1
Figure 6. On−Resistance vs. Drain Current and
Figure 8. Drain−to−Source Leakage Current
V
T
DS
J
V
= 25°C
−V
GS
−V
≥ −10 V
Figure 4. Transfer Characteristics
DS
GS
= 0 V
2
4
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
1.0
, DRAIN CURRENT (A)
T
Gate Voltage
J
vs. Voltage
6
3
= 100°C
T
V
V
J
GS
GS
= 25°C
T
T
= −2.5 V
= −4.5 V
J
J
= 150°C
= 100°C
4
8
T
1.5
J
= −55°C
10
5
2.0
12
6