UNR9111J Panasonic Semiconductor, UNR9111J Datasheet

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UNR9111J

Manufacturer Part Number
UNR9111J
Description
Silicon PNP epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
Transistors with built-in Resistor
UNR911xJ Series
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: January 2004
• Costs can be reduced through downsizing of the equipment and
• SS-Mini type package, allowing automatic insertion through tape
• UNR9110J (UN9110J)
• UNR9111J (UN9111J)
• UNR9112J (UN9112J)
• UNR9113J (UN9113J)
• UNR9114J (UN9114J)
• UNR9115J (UN9115J)
• UNR9116J (UN9116J)
• UNR9117J (UN9117J)
• UNR9118J (UN9118J)
• UNR9119J (UN9119J)
• UNR911AJ
• UNR911BJ
• UNR911CJ
• UNR911DJ (UN911DJ)
• UNR911EJ (UN911EJ)
• UNR911FJ (UN911FJ)
• UNR911HJ (UN911HJ)
• UNR911LJ (UN911LJ)
• UNR911MJ
• UNR911NJ
• UNR911TJ (UN911TJ)
• UNR911VJ
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts.
packing.
Parameter
Marking Symbol (R
6L
6A
6B
6C
6D
6E
6F
6H
6I
6K
6X
6Y
6Z
6M
6N
6O
6P
6Q
EI
EW
EY
FC
Symbol
V
V
0.51 kΩ
T
100 kΩ
100 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
P
I
T
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
22 kΩ
CBO
CEO
a
1 kΩ
C
stg
T
j
= 25°C
1
)
−55 to +125
Rating
−100
−50
−50
125
125
Note) The part numbers in the parenthesis show conventional part number.
100 kΩ
5.1 kΩ
4.7 kΩ
2.2 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
47 kΩ
47 kΩ
47 kΩ
SJH00038BED
(R
(UN911xJ Series)
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
0.27
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
±0.02
(0.50)(0.50)
1.60
1.00
1
3
B
+0.05
–0.03
±0.05
2
R
R
1
2
SSMini3-F1 Package
0.12
C
E
+0.03
–0.01
Unit: mm
1

Related parts for UNR9111J

UNR9111J Summary of contents

Page 1

... Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • SS-Mini type package, allowing automatic insertion through tape packing. ■ Resistance by Part Number Marking Symbol (R • UNR9110J (UN9110J) 6L • UNR9111J (UN9111J) 6A • UNR9112J (UN9112J) 6B • UNR9113J (UN9113J) 6C • UNR9114J (UN9114J) 6D • ...

Page 2

... Collector-emitter saturation voltage UNR911VJ Output voltage high-level Output voltage low-level UNR9113J/911BJ UNR911DJ UNR911EJ UNR911AJ Transition frequency UNR9113J UNR911AJ UNR911CJ Input UNR9118J resistance UNR9119J UNR911HJ/911MJ/911VJ UNR9116J/911FJ/911LJ/911NJ UNR9111J/9114J/9115J UNR9112J/9117J/911TJ UNR9110J/9113J/911DJ/911EJ UNR911AJ/911BJ 2 = 25°C ± 3°C a Symbol Conditions = −10 µ CBO −2 mA, I ...

Page 3

... Electrical Characteristics (continued) T Parameter Emitter-base resistance UNR911CJ Resistance UNR911MJ ratio UNR911NJ UNR9118J/9119J UNR9114J UNR911HJ UNR911TJ UNR911FJ UNR911AJ/911VJ UNR9111J/9112J/9113J/911LJ UNR911EJ UNR911DJ Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  150 125 100 75 ...

Page 4

... MHz = 25° −1 −10 −1 −10 − Collecto-base voltage V CB Characteristics charts of UNR9111J  −160 = 25° −1 − 0.9 mA −120 − 0.8 mA − 0.7 mA − 0.6 mA −80 − 0.5 mA − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0 − ...

Page 5

Characteristics charts of UNR9112J  −160 = 25° −1 − 0.9mA − 0.8mA −120 − 0.7mA − 0.6mA − 0.5mA −80 − 0.4mA − 0.3mA − 0.2mA −40 − 0.1mA ...

Page 6

UNR911xJ Series  MHz = 25° −10 −1 −1 −10 − Collector-base voltage V CB Characteristics charts ...

Page 7

Characteristics charts of UNR9115J  −160 = 25° −1 − 0.9 mA − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA −80 − ...

Page 8

UNR911xJ Series  MHz = 25° −1 −10 −1 −10 − Collector-base voltage V CB Characteristics charts ...

Page 9

Characteristics charts of UNR9118J  −240 = 25° −200 = − 1 − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA −80 − ...

Page 10

UNR911xJ Series  MHz 25° −1 −10 −1 −10 − Collector-base voltage V CB Characteristics charts ...

Page 11

Characteristics charts of UNR911BJ  −100 = 25° − 0.5 mA − − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0 −2 −4 −6 ...

Page 12

UNR911xJ Series  MHz = 25° −10 −20 −30 − Collector-base voltage V CB Characteristics charts of UNR911DJ  ...

Page 13

Characteristics charts of UNR911EJ  −60 = −1 25° − 0.9 mA − 0.8 mA − 0.7 mA −50 −40 − 0.3 mA −30 − 0.2 mA − 0.6 mA ...

Page 14

UNR911xJ Series  MHz = 25° −10 −1 −1 −10 − Collector-base voltage V CB Characteristics charts ...

Page 15

Characteristics charts of UNR911LJ  −240 = 25° −200 −160 = −1 −120 − 0.8 mA −80 − 0.6 mA − 0.4 mA −40 − 0 –2 – ...

Page 16

UNR911xJ Series  MHz = 25° −1 −10 −1 −10 − Collector-base voltage V CB Characteristics charts of ...

Page 17

Characteristics charts of UNR911TJ  25° −150 = −1 − 0.9 mA −100 − 0.7 mA − 0.8 mA − 0.6 mA − 0.5 mA − 0.4 mA −50 − ...

Page 18

UNR911xJ Series  –10 = − 25° –10 2 –10 −10 −1 −0.4 −0.6 −0.8 −1.0 −1.2 −1 Input voltage  I ...

Page 19

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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