UNR9111J Panasonic Semiconductor, UNR9111J Datasheet - Page 4

• Manufacturer Part Number: UNR9111J
• Description: Silicon PNP epitaxial planar type
• Manufacturer: Panasonic Semiconductor

UNR911xJ Series
4
Characteristics charts of UNR9111J
−160
−120
−80
−40
−10
−10
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
0
Collector-emitter voltage V
−1
−1
Collector-base voltage V
Collecto-base voltage V
−2
C
C
−1
−1
−4
I
I
B
C
ob
ob
= −1.0 mA
 V
 V
 V
−6
CE
CB
CB
−10
−10
− 0.9 mA
−8
f = 1 MHz
I
T
f = 1 MHz
I
T
T
E
E
a
a
a
CB
CB
= 0
= 0
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
= 25°C
= 25°C
= 25°C
−10
CE
( V )
( V )
( V )
−10
−10
−12
2
2
−10
−10
−10
−10
−10
−10
−10
−10
−10
−10
−10
−10
−1
−1
−1
−10
−1
−2
−0.4
−0.4
2
4
3
2
4
3
2
−1
Collector current I
−25°C
−0.6
−0.6
Input voltage V
Input voltage V
SJH00038BED
V
−1
25°C
I
I
CE(sat)
−0.8
−0.8
O
O
 V
 V
−1.0
 I
−1.0
IN
IN
−10
IN
IN
C
C
I
T
( V )
( V )
( mA )
V
T
C
V
T
a
−1.2
−1.2
a
/ I
a
O
= 75°C
O
= 25°C
= 25°C
= −5 V
= −5 V
B
= 10
−1.4
−10
−1.4
2
−10
−10
−10
−10
−10
−10
−10
160
120
−10
−1
80
40
−10
−1
−1
−2
−10
−1
−2
2
0
2
−1
V
−1
−1
CE
= −10 V
Collector current I
Output current I
Output current I
−10
−1
−1
V
V
h
FE
IN
IN
 I
 I
 I
−10
−10
O
C
O
O
−10
O
C
V
T
( mA )
V
T
( mA )
2
a
O
( mA )
a
O
= 25°C
T
= − 0.2 V
= 25°C
a
= − 0.2 V
−25°C
= 75°C
25°C
−10
−10
−10
2
3
2