UNR9111J Panasonic Semiconductor, UNR9111J Datasheet - Page 2

• Manufacturer Part Number: UNR9111J
• Description: Silicon PNP epitaxial planar type
• Manufacturer: Panasonic Semiconductor

UNR911xJ Series
■ Electrical Characteristics T
2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-base cutoff current (Emitter open)
Emitter-base UNR9115J/9116J/9117J/911BJ
cutoff current UNR9110J/9113J/911AJ
(Collector
open)
Forward
current
transfer
ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input
resistance UNR9119J
UNR9112J/9114J/911DJ/
911EJ/911MJ/911NJ/911TJ
UNR9111J
UNR911FJ/911HJ
UNR9119J
UNR9118J/911CJ/911LJ/911VJ
UNR9118J/911LJ
UNR9119J/911DJ/911FJ/911HJ
UNR9111J
UNR9112J/911EJ
UNR9113J/9114J/911AJ/
911CJ/911MJ
UNR911NJ/911TJ
UNR9110J/9115J/9116J/
9117J/911BJ
UNR911VJ
UNR9113J/911BJ
UNR911DJ
UNR911EJ
UNR911AJ
UNR9113J
UNR911AJ
UNR911CJ
UNR9118J
UNR911HJ/911MJ/911VJ
UNR9116J/911FJ/911LJ/911NJ
UNR9111J/9114J/9115J
UNR9112J/9117J/911TJ
UNR9110J/9113J/911DJ/911EJ
UNR911AJ/911BJ
UNR911VJ
Parameter
a
Symbol
V
= 25°C ± 3°C
V
V
I
I
I
V
V
CE(sat)
h
CBO
CEO
EBO
R
f
CBO
CEO
FE
OH
OL
T
1
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
C
C
C
C
CB
CB
CB
CB
CB
CE
EB
CE
CC
CC
CC
CC
CC
CC
= −10 µA, I
= −2 mA, I
= −10 mA, I
= −10 mA, I
SJH00038BED
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −50 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= −5 V, V
Conditions
B
C
B
B
B
B
B
E
E
E
E
E
B
B
C
B
B
E
= − 0.5 V, R
= −10 V, R
= −5 V, R
= 0
= −2.5 V, R
= −3.5 V, R
= 0
= 1 mA, f = 200 MHz
= 1 mA, f = 200 MHz
= 2 mA, f = 200 MHz
= 2 mA, f = 200 MHz
= 0
= − 0.3 mA
= −1.5 mA
= −6 V, R
= 0
= 0
= −5 mA
L
L
= 1 kΩ
L
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
−4.9
Min
−50
−50
160
20
30
35
60
80
80
6
0.51
Typ
150
150
100
1.0
2.2
4.7
80
80
10
22
47
− 0.01
− 0.25
+30%
− 0.1
− 0.5
− 0.1
− 0.2
− 0.5
− 0.2
Max
−1.0
−1.5
−2.0
400
460
20
MHz
Unit
mA
µA
µA
kΩ

V
V
V
V
V