UNR9111J Panasonic Semiconductor, UNR9111J Datasheet - Page 12

• Manufacturer Part Number: UNR9111J
• Description: Silicon PNP epitaxial planar type
• Manufacturer: Panasonic Semiconductor

UNR911xJ Series
12
Characteristics charts of UNR911DJ
−60
−50
−40
−30
−20
−10
10
10
−10
1
0
6
5
4
3
2
1
0
2
0
0
Collector-emitter voltage V
−1
Collector-base voltage V
Collector-base voltage V
−2
I
−10
B
= − 1.0 mA
C
C
− 0.9 mA
−4
−1
I
C
ob
ob
− 0.4 mA
− 0.8 mA
 V
 V
− 0.5 mA
 V
−20
−6
− 0.6 mA
CE
− 0.7 mA
CB
CB
−10
−8
f = 1 MHz
T
−30
T
f = 1 MHz
I
T
a
E
a
CB
a
− 0.3 mA
− 0.2 mA
CB
= 25°C
− 0.1 mA
= 0
= 25˚C
= 25°C
−10
CE
( V )
( V )
( V )
−10
−40
−12
2
−10
−10
−10
−10
−10
−10
−10
−10
−10
−
−1
−1
−
10
−10
−1
−2
−1.5
2
1
4
3
2
2
0
−1
Collector current I
−25°C
−2.0
SJH00038BED
Input voltage V
Input voltage V
V
25°C
−1
I
I
CE(sat)
−0.4
O
O
−2.5
 V
 V
 I
−3.0
IN
IN
−10
IN
T
IN
C
a
V
T
C
= 75°C
I
a
( V )
O
C
( mA )
( V )
V
T
= 25°C
−0.8
−3.5
/ I
a
= −5 V
O
= 25°C
= −5 V
B
= 10
−10
−4.0
2
−10
−10
−10
−10
−10
−10
160
120
−1
−1
80
40
−10
−10
−1
−1
−2
0
2
−1
−1
−1
Collector current I
Output current I
Output current I
−10
−1
−1
V
V
h
FE
IN
IN
 I
 I
 I
C
−10
O
O
O
−10
O
−10
C
V
T
V
T
( mA )
V
( mA )
T
25°C
−25°C
a
2
O
a
O
( mA )
CE
a
= 25°C
= 25°C
= − 0.2 V
= − 0.2 V
= 75°C
= −10 V
−10
−10
−10
2
2
3