EC2612 United Monolithic Semiconductors, EC2612 Datasheet - Page 2

• Manufacturer Part Number: EC2612
• Description: 40GHz Super Low Noise PHEMT
• Manufacturer: United Monolithic Semiconductors

EC2612
Dynamic characteristics
Tamb=25°C
Absolute Maximum Ratings
Tamb = +25°C
Symbol
Symbol
Symbol
(1) Operation of this device above any one of these parameters may cause permanent damage
Igsd
Tstg
Ref. : DSEC26120077 -17-Marc-00
Idss
Vds
Vgs
Gm
NF
Ga
Tch
Vp
Pt
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Minimum noise figure
Associated Gain
Drain to source voltage
Gate to source voltage
Total power dissipation
Operating channel temperature
Storage temperature range
Saturated drain current
Pinch off voltage
Transconductance
Gate to source/drain leakage
current
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Parameter
Parameter
Parameter
Ids=Idss/3
Vds=2V
(1)
Conditions
2/8
40GHz Super Low Noise PHEMT
Test
Ids = 0.1mA
Conditions
Ids = 25mA
Vgsd = -2V
F= 12GHz
F= 30GHz
F= 40GHz
F= 12GHz
F= 30GHz
F= 40GHz
Vds = 2V
Vgs = 0V
Vds = 2V
Vds = 2V
Test
Specifications subject to change without notice
Min
13
Min
-1.0
-55 to +175
10
50
9
8
Values
+175
-2.5
280
3.5
Typ.
0.5
1.3
1.5
9.5
Typ
-0.7
14
10
35
70
Max
Max
-0.3
0.7
1.7
1.9
60
5
Units
mW
°C
°C
V
V
Unit
mA
mS
Unit
µA
V
dB
dB
dB
dB