EC2612 United Monolithic Semiconductors, EC2612 Datasheet - Page 8

• Manufacturer Part Number: EC2612
• Description: 40GHz Super Low Noise PHEMT
• Manufacturer: United Monolithic Semiconductors

EC2612
Chip Mechanical Data
Ordering Information
Chip form
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSEC26120077 -17-Marc-00
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax : [phone]
: EC2612-99F/00
dimensions in µm
8/8
40GHz Super Low Noise PHEMT
Drain area= 60*60 µm
Gate area = 60*60 µm
Thickness = 100 µm
Recommended die attach :
Stage temperature = 300°C
(minimize temp. and time whenever
possible)
Preforms = Au/Sn (80/20)
Atmosphere : dry nitrogen or forming
gas flow
Recommended bonding :
(thermal compression)
The bonder should be properly
grounded
Source pads are directly connected to
back face metallization through the via
holes
18 m very pure gold wire
Specifications subject to change without notice