JDV2S07S Toshiba Semiconductor, JDV2S07S Datasheet
JDV2S07S
Manufacturer Part Number
JDV2S07S
Description
VCO for UHF Band Radio
Manufacturer
Toshiba Semiconductor
Datasheet
1.JDV2S07S.pdf
(4 pages)
VCO for UHF Band Radio
·
·
·
Maximum Ratings
Electrical Characteristics
Marking
High Capacitance Ratio : C
Low Series Resistance : r
This device is suitable for use in a small-size tuner.
Reverse voltage
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured: V
Characteristics
Characteristics
D
(Ta = = = = 25°C)
s
1V
TOSHIBA DIODE Silicon Epitaxial Planar Type
= 0.42 Ω (typ.)
/C
4V
(Ta = = = = 25°C)
= 2.3 (typ.)
Symbol
JDV2S07S
T
V
T
stg
C
R
Symbol
j
1V
C
C
V
I
r
R
1V
4V
/C
s
R
4V
sig
-55~150
I
V
V
V
V
R
Rating
R
R
R
R
150
= 500 mVrms
10
= 1 mA
1
= 10 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 1 V, f = 470 MHz
Test Condition
Unit
¾
°C
°C
V
Weight: 0.0011 g (typ.)
JEDEC
JEITA
TOSHIBA
1.85
Min
4.0
2.0
10
¾
¾
Typ.
0.42
4.5
2.0
2.3
¾
¾
JDV2S07S
1-1K1A
2002-01-23
―
―
Max
2.35
0.55
4.9
¾
¾
3
Unit: mm
Unit
nA
pF
¾
W
V
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JDV2S07S Summary of contents
Page 1
... MHz MHz ¾ 470 MHz 500 mVrms sig 1 JDV2S07S V °C °C JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Min Typ. Max ¾ 10 ¾ ¾ 4.0 4.5 1.85 2.0 2.35 2.0 2.3 ¾ ...
Page 2
... Reverse voltage V R (V) 100 10 1 0.1 0. Reverse voltage MHz -40 -20 Ambient temperature JDV2S07S I – 80° – °C 2002-01-23 ...
Page 3
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 JDV2S07S 000707EAA 2002-01-23 ...
Page 4
... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...