S29GL256N10TFI023 ETC, S29GL256N10TFI023 Datasheet

S29GL256N10TFI023

Manufacturer Part Number

S29GL256N10TFI023

Description

MirrorBit Flash Family

Manufacturer

ETC

Datasheet

1.S29GL256N10TFI023.pdf (110 pages)

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S29GLxxxN MirrorBit

S29GL512N, S29GL256N, S29GL128N

512 Megabit, 256 Megabit, and 128 Megabit,

3.0 Volt-only Page Mode Flash Memory featuring

110 nm MirrorBit process technology

Datasheet

Distinctive Characteristics

Architectural Advantages

Performance Characteristics

This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the

right to change or discontinue work on this proposed product without notice.

Single power supply operation

— 3 volt read, erase, and program operations

Enhanced VersatileI/O™ control

— All input levels (address, control, and DQ input levels)

Manufactured on 110 nm MirrorBit process

technology

SecSi™ (Secured Silicon) Sector region

— 128-word/256-byte sector for permanent, secure

— May be programmed and locked at the factory or by

Flexible sector architecture

— S29GL512N: Five hundred twelve 64 Kword (128

— S29GL256N: Two hundred fifty-six 64 Kword (128

— S29GL128N: One hundred twenty-eight 64 Kword

Compatibility with JEDEC standards

— Provides pinout and software compatibility for single-

100,000 erase cycles per sector typical

20-year data retention typical

High performance

— 80 ns access time (S29GL128N, S29GL256N),

— 8-word/16-byte page read buffer

— 25 ns page read times

— 16-word/32-byte write buffer reduces overall

Low power consumption (typical values at 3.0 V, 5

MHz)

— 25 mA typical active read current;

— 50 mA typical erase/program current

— 1 µA typical standby mode current

Package options

— 56-pin TSOP

— 64-ball Fortified BGA

and outputs are determined by voltage on V

identification through an 8-word/16-byte random

Electronic Serial Number, accessible through a

command sequence

the customer

Kbyte) sectors

(128 Kbyte) sectors

power supply flash, and superior inadvertent write

protection

90 ns access time (S29GL512N)

programming time for multiple-word updates

range is 1.65 to V

Publication Number 27631

Flash Family

Revision A

input.

Amendment 4

Software & Hardware Features

Software features

— Program Suspend & Resume: read other sectors

— Erase Suspend & Resume: read/program other

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall

— CFI (Common Flash Interface) compliant: allows host

Hardware features

— Advanced Sector Protection

— WP#/ACC input accelerates programming time

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or

before programming operation is completed

sectors before an erase operation is completed

multiple-word or byte programming time

system to identify and accommodate multiple flash

devices

(when high voltage is applied) for greater throughput

during system production. Protects first or last sector

regardless of sector protection settings

erase cycle completion

Issue Date May 13, 2004

INFORMATION

ADVANCE

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