MBM29DL32TF Fujitsu, MBM29DL32TF Datasheet - Page 24

• Manufacturer Part Number: MBM29DL32TF
• Description: 32M-Bit Dual Operation Flash Memory
• Manufacturer: Fujitsu

DQ
000Ah
003Eh
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0005h
0000h
0004h
0000h
0016h
0002h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0050h
0052h
0049h
0031h
15
to DQ
0
A
6
1Ch
1Dh
2Ch
2Dh
1Ah
1Bh
1Eh
1Fh
2Ah
2Bh
2Eh
2Fh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
31h
32h
33h
34h
40h
41h
42h
43h
to A
Common Flash Memory Interface Code Table
0
Query-unique ASCII string “QRY”
Primary OEM Command Set
02h : AMD/FJ standard type
Address for Primary Extended Table
Alternate OEM Command Set
Address for Alternate OEM Extended Table
V
V
V
V
Typical timeout per word write 2
Typical timeout for buffer write 2
Typical timeout per individual sector erase 2
Typical timeout for full chip erase 2
Max timeout for byte/word write 2
Max timeout for buffer write 2
Max timeout per individual sector erase 2
Max timeout for full chip erase 2
Device Size
I/O information
Flash Device Interface description 02h :
Max number of bytes in multi-byte write
Number of Erase Block Regions within device
Erase Block Region 1 Information
bit 15 to bit 0 : y
bit 31 to bit 16 : z
(z
Erase Block Region 2 Information
bit 15 to bit 0 : y
bit 31 to bit 16 : z
Query-unique ASCII string “PRI”
Major version number, ASCII
(00h
(z
CC
CC
PP
PP
Min voltage
Max voltage
Min voltage (write/erase) DQ
Max voltage (write/erase) DQ
256 bytes)
256 bytes)
not applicable)
2
N
byte
number of sectors
number of sectors
size
size
N
times typical
MBM29DL32TF/BF
Description
N
N
N
7
N
7
times typical
to DQ
to DQ
s
N
times typical
s
ms
4
4
N
: 1 V, DQ
2
: 1 V, DQ
8/ 16
times typical
N
N
ms
3
3
to DQ
to DQ
0
0
: 100 mV
: 100 mV
(Continued)
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