MBM29SL800BE Fujitsu Media Devices, MBM29SL800BE Datasheet - Page 3

• Manufacturer Part Number: MBM29SL800BE
• Description: (MBM29SL800TE/BE) FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
• Manufacturer: Fujitsu Media Devices

Embedded Erase
FEATURES
• 0.23 m Process Technology
• Single 1.8 V read, program, and erase
• Compatible with JEDEC-standard world-wide pinouts
• Minimum 100,000 program/erase cycles
• High performance
• Sector erase architecture
• Boot Code Sector Architecture
• Embedded Erase
• Embedded Program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
• Automatic sleep mode
• Erase Suspend/Resume
• Sector protection
• Sector Protection set function by Extended sector Protect command
• Fast programming Function by Extended Command
• Temporary sector unprotection
Minimizes system level power requirements
48-ball FBGA (Package suffix : PBT)
45-ball SCSP (Package suffix : PW)
90 ns maximum access time
One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords sectors in word mode
One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and fifteen 64 Kbytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
T
B
Automatically pre-programs and erases the chip or any sector
Automatically writes and verifies data at specified address
Hardware method for detection of program or erase cycle completion
When addresses remain stable, automatically switch themselves to low power mode
Suspends the erase operation to allow a read in another sector within the same device
Hardware method disables any combination of sectors from program or erase operations
Temporary sector unprotection via the RESET pin
Top sector
Bottom sector
TM
and Embedded Program
TM
Algorithms
TM
Algorithms
TM
are trademarks of Advanced Micro Devices, Inc.
MBM29SL800TE/BE
-90/10
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