TIM1011-2L Toshiba Semiconductor, TIM1011-2L Datasheet
TIM1011-2L
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TIM1011-2L Summary of contents
Page 1
... The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET TIM1011-2L TIM1011-2L TIM1011-2L TIM1011-2L BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE SYMBOL CONDITION P 1dB = V ...
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... Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 at 260 260 at 260 SYMBOL stg 0.5 0.15 13.0 0.3 17.0 MAX. 8.5 MAX. 2 TIM1011- RATING UNIT 2 175 C -65 +175 C Unit : mm Gate Source Drain ...
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... Frequency (GHz) Frequency (GHz) Frequency (GHz) Frequency (GHz Pin (dBm) Pin (dBm) Pin (dBm) Pin (dBm) 3 TIM1011-2L 12.2 12.2 12.2 12.2 12.7 12.7 12.7 12 ...
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... Po (dBm), Single Carrie Po(dBm), Single Carrier (℃ (℃ (℃ (℃ TIM1011- ...
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... TIM11011-2L S-PARAMETERS (MAGN. and ANGLES) S21 ANG MAG ANG 148 2.49 -85 110 2.98 -131 50 3.12 180 -63 2.84 132 -123 2.55 89 -164 2.37 46 142 2. 2.05 -61 5 TIM1011-2L f=10.4 – – – – 13.2GHz S12 S22 MAG ANG MAG 0.066 -139 0.55 0.110 176 0.46 0.145 129 0.38 0.153 84 0.36 0.155 43 0.37 0.158 3 0.34 0.164 -42 0.22 0.154 -100 0.18 ...