stn4972s8tg Stanson Technology Co., Ltd., stn4972s8tg Datasheet - Page 3

• Manufacturer Part Number: stn4972s8tg
• Description: Dual N Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Tran Conductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Turn-On Time
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Parameter
Symbol
T
V
R
V
J
(BR)DSS
I
Coss
t
t
Crss
=55 ℃
Ciss
I
I
DS(on)
GS(th)
D(on)
g
V
Q
Q
d(on)
d(off)
Q
GSS
DSS
tr
tf
SD
fs
gd
gs
g
Dual N Channel Enhancement Mode MOSFET
VDS=15.0V,VGS=0V
V
V
V
V
V
V
V
V
DS
DS
I
I
GS
DS
GS
DS
V
GS
DD
V
V
D
S
=V
=15.0V,I
=2.3A,V
=5A,V
DS
DS
DS
=4
=15V,V
=0V,I
=0V,V
=
=15V,R
Condition
10V, I
≥5V,V
=24V
=24V
f=1MHz
R
GS
.5V, I
I
G
D
,I
=2A
=1 Ω
GEN
D
D
GS
=250uA
=250 uA
GS
GS
GS
D
GS
GS
D
L
= ± 20V
D
=8.5A
=15 Ω
=10V
=7.8A
=0V
=0V
=10
=6.2A
=10V
=0V
STN4972
Copyright © 2007, Stanson Corp.
Min Typ Max Unit
1.0
30
25
STN4972 2008. V1
0.012
0.015
1350
258
150
0.8
4.2
2.5
13
16
15
20
12
6
0.014
0.018
± 100
3.0
1.2
20
16
40
20
1
5
8.5A
nC
nA
uA
nS
pF
Ω
V
V
A
S
V