STP1013 Stanson Technology Co., Ltd., STP1013 Datasheet

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STP1013

Manufacturer Part Number
STP1013
Description
Dual P Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP1013 is the
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer power management and other bettery powered circuits where
high-side switching, low in-line power loss, and resistance to transients are needed.
PIN
PIN
PIN
PIN CONFIGURATION
SOT-
SOT-
SOT-
SOT-523
PART
PART
PART
PART MARKING
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
CONFIGURATION
CONFIGURATION
CONFIGURATION
523
523
523 / / / / SC-
MARKING
MARKING
MARKING
SC-
SC-
SC-89
89
89
89
P-Channel enhancement mode power field effect transistors are
FEATURE
FEATURE
FEATURE
FEATURE
20V/0.45A, R
20V/0.35A, R
20V/0.25A, R
Super high density cell design for extremely
low R
Exceptional low on-resistance and maximum
DC current capability
SOT-523 / SC89 package design
Dual P Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
DS(ON)
=520ohm@V
=700ohm@V
=950ohm@V
ST
ST
ST
STP1013
STP1013 2009. V1
P1013
P1013
P1013
GS
GS
GS
=4.5V
=2.5V
=1.8V
-0.45A

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STP1013 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed ...

Page 2

... A =150℃ =80℃ =25℃ =70℃ P1013 P1013 STP1013 ST P1013 -0.45A Typical Unit Typical Typical Typical Unit Unit Unit V -20 V DSS V ±12 V GSS -0. -0. 0.16 ℃ T -55/150 J ℃ T -55/150 STG STP1013 2009. V1 ...

Page 3

... P1013 ST STP1013 ST P1013 P1013 -0.45A Min Min Min Min Typ Typ Typ Typ -20 -0.35 =0V =0V =-5V -0.7 420 580 750 0.4 -0.8 =0V 1.5 0.3 0. =-0.4A 1.4 STP1013 2009. V1 Max Max Max Max Unit Unit Unit Unit V -0.8 V ±100 520 700 mΩ 950 S -1 1.8 ...

Page 4

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP1013 Dual P Channel Enhancement Mode MOSFET STP1013 2009. V1 P1013 P1013 P1013 -0.45A ...

Page 5

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP1013 Dual P Channel Enhancement Mode MOSFET STP1013 2009. V1 P1013 P1013 P1013 -0.45A ...

Page 6

... SOT SOT SOT SOT523 523 523 523 ( ( ( ( SC-89 SC-89 SC-89 SC-89 PACKAGE PACKAGE PACKAGE PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com Dual P Channel Enhancement Mode MOSFET OUTLINE OUTLINE OUTLINE ST ST P1013 P1013 ST STP1013 P1013 -0.45A STP1013 2009. V1 ...

Page 7

... STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP1013 Dual P Channel Enhancement Mode MOSFET STP1013 2009. V1 P1013 P1013 P1013 -0.45A ...

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