STP6308 Stanson Technology Co., Ltd., STP6308 Datasheet

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STP6308

Manufacturer Part Number
STP6308
Description
Dual P Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP6308 is the dual P-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer circuits where high-side switching, low in-line power loss and
resistance to transients are needed.
PIN
PIN
PIN
PIN CONFIGURATION
SOT-363
SOT-363
SOT-363
SOT-363 / / / / SC70-6L
ORDERING
ORDERING
ORDERING
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
※ Process Code : A ~ Z(1~26) ; a ~ z(27~52)
CONFIGURATION
CONFIGURATION
CONFIGURATION
Part
Part
Part
Part Number
Y:
Y:
Y:
A:
A:
A:
Y: Year
A: Process
D1
S1
STP6308
Year
Year
Year
Process
Process
Process Code
08YW
SC70-6L
SC70-6L
SC70-6L
Number
Number
Number
INFORMATION
INFORMATION
INFORMATION
G2
G
S2
D2
Code
Code
Code
SOT-363 / SC70-6L
Package
Package
Package
Package
FEATURE
FEATURE
FEATURE
FEATURE
-20V/1.0A, R
-20V/0.8A, R
-20V/0.7A, R
Super high density cell design for extremely
low R
Exceptional low on-resistance and maximum
DC current capability
SOT-363 / SC70-6L package design
Dual P Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
DS(ON)
= 520mΩ@V
=700mΩ@V
=950mΩ@V
Part
Part
Part
Part Marking
ST
ST
STP P P P 630
ST
Marking
Marking
Marking
YA
STP6308 2009. V1
630
630
6308 8 8 8
GS
GS
GS
=2.5V
=1.8V
=4.5V
-1.0A

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STP6308 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed ...

Page 2

... T≦10sec Steady State ST STP 630 ST 630 6308 630 ST -1.0A Typical Unit Typical Typical Typical Unit Unit Unit V -20 V DSS V ±20 V GSS - 0.19 T -55/150 ℃ J ℃ T -55/150 STG ℃/W R 360 θJA 400 STP6308 2009. V1 ...

Page 3

... Min Min Min Min Typ Typ Typ Typ -20 -0.35 =0V =0V -2 420 580 750 1.5 -0.8 =0V 1.5 0.3 0.2 145 = =-0.5A STP6308 2009. V1 Max Max Max Max Unit Unit Unit Unit V -0.8 V ±100 520 700 mΩ 950 S -1 ...

Page 4

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST ST STP 630 ST Dual P Channel Enhancement Mode MOSFET STP6308 2009. V1 630 6308 630 -1.0A ...

Page 5

... TYPICAL TYPICAL TYPICAL CHARACTERICTICS TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST ST STP 630 ST Dual P Channel Enhancement Mode MOSFET STP6308 2009. V1 630 6308 630 -1.0A ...

Page 6

... SOT363 SOT363 (sc70-6L) SOT363 (sc70-6L) (sc70-6L) (sc70-6L) PACKAGE PACKAGE PACKAGE PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com Dual P Channel Enhancement Mode MOSFET OUTLINE OUTLINE OUTLINE ST STP 630 ST 630 630 6308 -1.0A STP6308 2009. V1 ...

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