STP4925 Stanson Technology Co., Ltd., STP4925 Datasheet

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STP4925

Manufacturer Part Number
STP4925
Description
Dual P Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor
are produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, notebook computer power management,
PIN
PIN
PIN
PIN CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
PART
PART
PART
PART MARKING
SOP-8
SOP-8
SOP-8
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
and other battery powered circuits where high-side switching
CONFIGURATION
CONFIGURATION
CONFIGURATION
MARKING
MARKING
MARKING
Dual P Channel Enhancement Mode MOSFET
FEATURE
FEATURE
FEATURE
FEATURE
-30V/-7.2A, R
-30V/-5.6A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
Copyright © 2007, Stanson Corp.
@V
@V
STP4
STP4
STP4
STP4925
DS(ON)
DS(ON)
GS
GS
DS(ON)
STP4925 2009. V1
=-10V
= -4.5V
= 25mΩ (Typ.)
= 40mΩ
925
925
925
-
7.2A

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STP4925 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION STP4925 is the dual P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management, ...

Page 2

... =25℃ =70 ℃ STG R θJA STP4 STP4 925 925 STP4 STP4925 925 7.2A - Unit Typical Unit Unit Unit -30 V ± -7.2 A -5.6 -20 A -2.3 A 2.8 W 1.8 ℃ -55/150 ℃ -55/150 ℃ Copyright © 2007, Stanson Corp. STP4925 2009. V1 ...

Page 3

... Unit Min Min Min Typ Typ Max Typ Max Unit Max Unit Unit -30 V -1.0 -3.0 V ±100 - 0.022 0.025 Ω 0.030 0.040 24 S -0.8 -1 2.3 nC 4.5 1650 350 pF 235 110 35 80 Copyright © 2007, Stanson Corp. STP4925 2009. V1 ...

Page 4

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP4 STP4 STP4 STP4925 Dual P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 925 925 925 7.2A - STP4925 2009. V1 ...

Page 5

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP4 STP4 STP4 STP4925 Dual P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 925 925 925 7.2A - STP4925 2009. V1 ...

Page 6

... SOP-8 SOP-8 PACKAGE PACKAGE OUTLINE OUTLINE SOP-8 SOP-8 PACKAGE PACKAGE OUTLINE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP4 STP4 STP4 STP4925 Dual P Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 925 925 925 7.2A - STP4925 2009. V1 ...

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