ph3330l NXP Semiconductors, ph3330l Datasheet - Page 2

• Manufacturer Part Number: ph3330l
• Description: Ph3330l N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
PH3330L_1
Product data sheet
Type number
PH3330L
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
Ordering information
Limiting values
Package
Name
LFPAK
Description
plastic single-ended surface mounted package (LFPAK); 4 leads
Conditions
25 C
25 C
T
T
T
T
T
T
unclamped inductive load; I
t
V
p
mb
mb
mb
mb
mb
mb
GS
= 0.15 ms; V
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
= 10 V; starting at T
Rev. 01 — 1 February 2006
T
T
j
j
150 C
150 C; R
GS
DS
GS
Figure 1
= 10 V; see
= 10 V; see
30 V; R
p
p
GS
j
= 20 k
10 s; see
10 s
= 25 C
GS
D
= 70 A;
Figure 2
= 50 ;
Figure 2
N-channel TrenchMOS logic level FET
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
55
55
PH3330L
Max
30
30
100
54.2
300
62.5
+150
+150
52
208
245
20
Version
SOT669
2 of 12
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C