ph3330l NXP Semiconductors, ph3330l Datasheet - Page 6

• Manufacturer Part Number: ph3330l
• Description: Ph3330l N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
PH3330L_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
100
100
D
80
60
40
20
80
60
40
20
0
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
j
j
0
0
= 25 C
= 25 C and 150 C; V
V
GS
(V) = 10
0.2
1
5
4.5
T
j
= 150 C
0.4
2
3.8
DS
> I
D
3.6
25 C
R
0.6
3
DSon
V
003aab261
003aab263
V
DS
GS
(V)
(V)
2.8
2.6
3.4
3.2
Rev. 01 — 1 February 2006
3
0.8
4
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
a
1.6
1.2
0.8
0.4
10
8
6
4
2
0
2
0
T
of drain current; typical values
factor as a function of junction temperature
a
-60
0
j
= 25 C
=
V
----------------------------- -
R
GS
DSon 25 C
R
N-channel TrenchMOS logic level FET
(V) =
20
DSon
0
3
40
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
60
3.2
60
120
PH3330L
80
003aab262
003aab273
T
I
3.4
D
j
( C)
(A)
3.6
3.8
4.5
10
100
180
5
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