psmn4r3-80bs NXP Semiconductors, psmn4r3-80bs Datasheet - Page 3

• Manufacturer Part Number: psmn4r3-80bs
• Description: Psmn4r3-80bs N-channel 80 V, 4.3 M?? Standard Level Mosfet In D2pak
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN4R3-80BS
Objective data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
200
160
120
80
40
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
(1)
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aaf630
mb
( ° C)
Rev. 01 — 27 December 2010
200
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 80 V; R
N-channel 80 V, 4.3 mΩ standard level MOSFET in D2PAK
p
p
≤ 10 µs; T
≤ 10 µs; T
j
j
Fig 2.
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
P
Figure 2
(%)
= 25 °C; I
der
120
80
40
mb
mb
0
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C;
= 25 °C
GS
D
= 20 kΩ
= 120 A;
Figure 1
Figure 1
50
PSMN4R3-80BS
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
175
Max
80
80
20
120
120
736
306
260
120
736
676
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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