psmn4r3-80bs NXP Semiconductors, psmn4r3-80bs Datasheet - Page 6

• Manufacturer Part Number: psmn4r3-80bs
• Description: Psmn4r3-80bs N-channel 80 V, 4.3 M?? Standard Level Mosfet In D2pak
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
PSMN4R3-80BS
Objective data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
R
(m Ω )
(S)
g
DSon
250
200
150
100
fs
50
25
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
15
5
30
…continued
10
45
15
Conditions
I
see
I
V
60
All information provided in this document is subject to legal disclaimers.
S
S
003aaf619
DS
003aaf621
V
= 25 A; V
= 25 A; dI
GS
I
D
Figure 17
= 20 V
(A)
(V)
Rev. 01 — 27 December 2010
75
20
GS
S
/dt = 100 A/µs; V
N-channel 80 V, 4.3 mΩ standard level MOSFET in D2PAK
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(A)
I
(A)
D
I
D
100
80
60
40
20
80
60
40
20
0
0
GS
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
= 0 V;
20.0
8.0
6.0
5.5
0.5
2
PSMN4R3-80BS
T
j
= 175 ° C
Min
-
-
-
4
1
Typ
0.8
59
109
V
T
GS
j
V
= 25 ° C
V
© NXP B.V. 2010. All rights reserved.
DS
GS
(V) = 4.5
003aaf620
003aaf622
(V)
(V)
Max
1.2
-
-
4.4
4.2
4.0
1.5
6
Unit
V
ns
nC
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