psmn063 NXP Semiconductors, psmn063 Datasheet

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psmn063

Manufacturer Part Number
psmn063
Description
Psmn063-150d N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
2. Pinning information
Table 1:
[1]
1.
Pin
1
2
3
mb
It is not possible to make a connection to pin 2 of the SOT428 package.
TrenchMOS™ is a trademark of Koninklijke Philips Electronics N.V.
Description
gate (g)
drain (d)
source (s)
connected to drain (d)
Pinning - SOT428 (D-PAK), simplified outline and symbol
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS
Product availability:
PSMN063-150D in SOT428 (D-PAK).
PSMN063-150D
N-channel enhancement mode field-effect transistor
Rev. 03 — 31 October 2001
TrenchMOS™ technology
Fast Switching
DC to DC converters
V
P
DS
tot
[1]
= 150 W
= 150 V
1
Simplified outline
technology.
Top view
1
mb
2
MBK091
3
Very low on-state resistance
Low thermal resistance
Switched mode power supplies
I
R
Symbol
D
DSon
= 29 A
63 m
MBB076
g
d
s
Product data

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psmn063 Summary of contents

Page 1

... PSMN063-150D N-channel enhancement mode field-effect transistor Rev. 03 — 31 October 2001 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS Product availability: PSMN063-150D in SOT428 (D-PAK). 1.2 Features TrenchMOS™ technology Fast Switching 1.3 Applications converters 1.4 Quick reference data V ...

Page 2

... 0.2 ms starting unclamped inductive load starting Rev. 03 — 31 October 2001 PSMN063-150D Min Max Unit 150 V 150 116 A 150 W 55 +175 C 55 +175 ...

Page 3

... der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 03 — 31 October 2001 PSMN063-150D 03aa24 50 100 150 ------------------- 100 003aaa148 100 100 ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08594 Product data N-channel enhancement mode field-effect transistor Conditions Figure 4 Vertical in still air Rev. 03 — 31 October 2001 PSMN063-150D Value Unit 1.0 K/W 50 K/W 003aaa149 ...

Page 5

... Figure 2 5 Figure /dt = 100 Rev. 03 — 31 October 2001 PSMN063-150D Typ Max Unit 0. 500 A 0.02 100 176 ...

Page 6

... I D (A) Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 03 — 31 October 2001 PSMN063-150D 003aaa152 175 ( DSon 03aa30 140 - 100 ...

Page 7

... C (pF ( MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 03 — 31 October 2001 PSMN063-150D 03aa35 typ min max ( 003aaa154 C iss C oss C rss (V) © ...

Page 8

... 1 ( Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 03 — 31 October 2001 PSMN063-150D 003aaa155 120 (nC and 120 V DD © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...

Page 9

... max. max. min. max. 5.36 0.4 6.22 6.73 4.81 2.285 4.57 4.0 5.26 0.2 5.98 6.47 4.45 REFERENCES JEDEC EIAJ TO-252 SC-63 Rev. 03 — 31 October 2001 PSMN063-150D max. min. 10.4 2.95 0.7 0.5 0.2 9.6 2.55 0.5 EUROPEAN ISSUE DATE PROJECTION 98-04-07 99-09-13 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT428 y max. ...

Page 10

... Revision history Table 5: Revision history Rev Date CPCN Description 03 20011031 - Product data; third version; supersedes second version PSMN063_150D_2 of 1 August 1999. • Max value 19990801 - Product specification; second version PSMN063_150D_2; supersedes initial Lotus Manuscript version of August 1999 Rev 1.000. ...

Page 11

... Rev. 03 — 31 October 2001 Rev. 03 — 31 October 2001 PSMN063-150D PSMN063-150D Fax: + 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...

Page 12

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 October 2001 Document order number: 9397 750 08594 PSMN063-150D N-channel enhancement mode field-effect transistor ...

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