psmn063 NXP Semiconductors, psmn063 Datasheet - Page 8

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psmn063

Manufacturer Part Number
psmn063
Description
Psmn063-150d N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
9397 750 08594
Product data
Fig 13. Source (diode forward) current as a function of
T
j
I S
(A)
= 25 C and 175 C; V
30
20
10
source-drain (diode forward) voltage; typical
values.
0
0
0.4
T j = 175 o C
GS
= 0 V
0.8
T j = 25 o C
V SD (V)
003aaa156
1.2
Rev. 03 — 31 October 2001
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 30 A; V
12
charge; typical values.
8
4
0
0
DD
= 30 V and 120 V
20
PSMN063-150D
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
V DD = 30 V
40
V DD = 120 V
Q G (nC)
003aaa155
60
8 of 12

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