gt8g136 TOSHIBA Semiconductor CORPORATION, gt8g136 Datasheet - Page 2

• Manufacturer Part Number: gt8g136
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Note
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Note 2a : Device mounted on
Note 3: ○ on lower right of the marking indicates Pin 1.
Repetitive rating: pulse width limited by maximum junction temperature.
a glass-epoxy board (a)
※ Weekly code:
※ Pb-Free Finish (Only a coating lead terminal) :
Characteristics
It is marking about an underline to a week of manufacture mark.
Rise time
Turn-on time
Fall time
Turn-off time
for GATE
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
for EMITTER
for COLLECTOR
(Three digits)
(Ta = 25°C)
FR-4
25.4 × 25.4 × 0.8
V
V
Symbol
GE (OFF)
CE (sat)
I
I
C
GES
CES
(unit : mm)
t
t
on
off
t
t
ies
r
f
V
V
I
I
V
C
C
GE
CE
CE
= 1 mA, V
= 150 A, V
3 V
= 400 V, V
= 10 V, V
= ± 6 V, V
0
V
Duty cycle < = 1%
IN
2
Note 2b : Device mounted on
: t
t
r
f
Test Condition
CE
< = 100 ns
< = 100 ns
GE
GE
CE
GE
= 5 V
= 3 V
= 0, f = 1 MHz
= 0
= 0
51 Ω
a glass-epoxy board (b)
≒300V
for EMITTER
for COLLECTOR
0.65
Min
for GATE
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
FR-4
25.4 × 25.4 × 0.8
2500
Typ.
1.0
3.5
1.5
1.7
1.6
1.9
⎯
⎯
(unit : mm)
GT8G136
2007-04-23
± 10
1.35
Max
10
⎯
⎯
⎯
⎯
⎯
⎯
Unit
μA
μA
pF
μs
V
V