byg90-90 NXP Semiconductors, byg90-90 Datasheet
byg90-90
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byg90-90 Summary of contents
Page 1
... DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 BYG90-90 Schottky barrier rectifier diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC01 1996 May 13 ...
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... Top view Fig.1 Simplified outline (SOD106A) and symbol. CONDITIONS T = 100 C; see Fig.2; amb R = 13.5 K/W; note 0.2 V; note 2 R(equiv 8.3 ms half sine wave; JEDEC method t = 100 Product specification BYG90-90 a MAM129 - 1 MIN. MAX. UNIT 0.5 A +150 C 65 ...
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... 100 note 1; see Fig.3 R RRMmax 100 C; note 1; R RRMmax j see Fig MHz; see Fig.4 R PARAMETER 3 Product specification BYG90-90 MIN. TYP. MAX. UNIT 360 mV 790 mV 690 100 pF CONDITIONS VALUE UNIT note 1 80 K/W ...
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... V (V) F (1) T amb (2) T amb (3) T amb (4) T amb (5) T amb Fig.3 MLC499 100 V ( Product specification BYG90-90 MLC498 (1) (2) (3) (4) ( 150 C. = 125 C. = 100 Reverse current as a function of reverse voltage; typical values. 100 ...
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... Philips Semiconductors Schottky barrier rectifier diode PACKAGE OUTLINE handbook, full pagewidth 2.65 max 0.1 2.5 1.5 Dimensions in mm. The marking bar indicates the cathode. 1996 May 13 5.5 5.1 4.57 max 0.2 1.5 1.2 cathode identifier Fig.5 SOD106A. 5 Product specification BYG90-90 MSA356 - 1 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 13 6 Product specification BYG90-90 ...