byg90-90 NXP Semiconductors, byg90-90 Datasheet - Page 3

• Manufacturer Part Number: byg90-90
• Description: Schottky Barrier Rectifier Diode
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOD106A standard mounting conditions.
1996 May 13
V
I
C
R
SYMBOL
SYMBOL
amb
R
F
Schottky barrier rectifier diode
d
th j-a
= 25 C; unless otherwise specified.
forward voltage
reverse current
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
see Fig.2; note 1
V
V
see Fig.3
V
R
R
R
I
I
I
F
F
F
= V
= V
= 4 V; f = 1 MHz; see Fig.4
= 0.06 A
= 1 A
= 1 A; T
RRMmax
RRMmax
CONDITIONS
j
= 100 C
; note 1; see Fig.3
; T
j
3
= 100 C; note 1;
note 1
MIN.
CONDITIONS
TYP.
Product specification
360
790
690
0.5
5
100
VALUE
BYG90-90
MAX.
80
mV
mV
mV
mA
mA
pF
UNIT
UNIT
K/W