ptvs12vp1utp NXP Semiconductors, ptvs12vp1utp Datasheet - Page 6

• Manufacturer Part Number: ptvs12vp1utp
• Description: High-temperature 600 W Transient Voltage Suppressor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PTVSXP1UTP_SER
Product data sheet
Fig 1.
Fig 3.
P
(%)
(W)
I
PP
PPM
150
100
10
10
10
10
50
0
10
5
4
3
2
0
IEC 61643-321
T
Rated peak pulse power as a function of pulse
duration; typical values
10/1000 s pulse waveform according to
−1
amb
= 25 C
100 % I
1
1.0
PP
; 10 μs
10
50 % I
2.0
PP
; 1000 μs
10
2
3.0
10
All information provided in this document is subject to legal disclaimers.
t
006aab319
3
p
006aac172
t
(ms)
p
(μs)
10
4.0
Rev. 1 — 11 October 2011
4
High-temperature 600 W Transient Voltage Suppressor
Fig 2.
Fig 4.
P
PPM(25°C)
P
PPM
(pF)
C
(1) PTVS5V0P1UTP
(2) PTVS12VP1UTP
(3) PTVS24VP1UTP
(4) PTVS64VP1UTP
d
10
10
10
1.2
0.8
0.4
0.0
10
4
3
2
0
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
1
T
Diode capacitance as a function of reverse
voltage; typical values
amb
PTVSxP1UTP series
= 25 C; f = 1 MHz
50
(1)
100
10
(2)
(3)
V
150
R
(V)
© NXP B.V. 2011. All rights reserved.
T
006aac765
(4)
006aac173
j
(°C)
200
10
2
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