2sj217 Renesas Electronics Corporation., 2sj217 Datasheet

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2sj217

Manufacturer Part Number
2sj217
Description
Silicon P Channel Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ217
Manufacturer:
HIT
Quantity:
5 510
Part Number:
2SJ217
Manufacturer:
VIA
Quantity:
5 510
2SJ217
Silicon P Channel MOS FET
Description
High speed power switching
Features
Outline
Rev.2.00 Sep 07, 2005 page 1 of 6
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Can be driven from 5 V source
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
G
D
S
1. Gate
2. Drain (Flange)
3. Source
(Previous: NON-084)
REJ03G0850-0200
Sep 07, 2005
Rev.2.00

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2sj217 Summary of contents

Page 1

... Silicon P Channel MOS FET Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) Rev ...

Page 2

... Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Electrical Characteristics Item Drain to source breakdown voltage ...

Page 3

... Main Characteristics Power vs. Temperature Derating 200 150 100 100 Case Temperature Typical Output Characteristics –100 –10 V –6 V –80 –60 –40 – –4 –8 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.5 –2.0 –1.5 –1.0 – ...

Page 4

... Static Drain to Source on State Resistance vs. Temperature 0.1 0.08 – – 0.04 –10 A, –20 A –10 V 0.02 0 – Case Temperature Body-Drain Diode Reverse Recovery Time 5000 µ 25°C, Pulse Test 2000 1000 500 200 100 50 –0.5 –1 –2 –5 ...

Page 5

... 0.5 0.3 0.1 0.03 0.01 10 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω –10 V Rev.2.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage –100 Pulse Test –80 –60 – –40 – – –0.5 –1.0 –1.5 Source to Drain Voltage Normalized Transient Thermal Impedance vs ...

Page 6

... RENESAS Code SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part Name 2SJ217-E 30 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page Package Name MASS[Typ.] TO-3P / TO-3PV 5.0g 4.8 ± ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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