2sj217 Renesas Electronics Corporation., 2sj217 Datasheet - Page 5

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2sj217

Manufacturer Part Number
2sj217
Description
Silicon P Channel Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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2SJ217
Rev.2.00 Sep 07, 2005 page 5 of 6
Vin
–10 V
Vin Monitor
Switching Time Test Circuit
50 Ω
0.03
0.01
0.3
0.1
10 µ
3
1
0.5
D = 1
D.U.T.
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ
R
L
V
= –30 V
–100
DD
–80
–60
–40
–20
Vout
Monitor
0
0
Source to Drain Voltage
Pulse Test
1 m
Reverse Drain Current vs.
–0.5
Source to Drain Voltage
5 V
Pulse Width PW (S)
10 V
–1.0
10 m
V
GS
–1.5
t d(on)
= 0, 5 V
Vout
Vin
θch – c (t) = γ s (t) • θch – c
θch – c = 0.83°C/W, Tc = 25°C
P
DM
V
–2.0
100 m
SD
10%
(V)
–2.5
10%
PW
90%
T
t r
Waveform
1
t d(off)
D =
Tc = 25°C
PW
T
90%
10
90%
10%
t f

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