2sj217 Renesas Electronics Corporation., 2sj217 Datasheet - Page 3

• Manufacturer Part Number: 2sj217
• Description: Silicon P Channel Mos Fet
• Manufacturer: Renesas Electronics Corporation.

2SJ217
Main Characteristics
Rev.2.00 Sep 07, 2005 page 3 of 6
–100
–2.5
–2.0
–1.5
–1.0
–0.5
200
150
100
–80
–60
–40
–20
50
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
–10 V
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
–2
–4
Gate to Source Voltage
50
–6 V
–8
–4
100
–12
–6
Tc (°C)
V
Pulse Test
Pulse Test
I
150
D
GS
V
–16
V
= –10 A
–8
GS
DS
= –2 V
–50 A
–20 A
–5 V
–4 V
–3 V
(V)
(V)
200
–20
–10
0.005
–200
–100
0.05
0.02
0.01
–50
–20
–10
–50
–40
–30
–20
–10
0.5
0.2
0.1
–5
–2
Typical Foward Transfer Characteristics
0
–1
–2
Static Drain to Source on State Resistance
0
Drain to Source Voltage
Gate to Source Voltage
Pulse Test
Operation in
this area is
limited by R
Ta = 25°C
V
Pulse Test
Maximum Safe Operation Area
DS
–2
–5
= –10 V
–1
Drain Current
V
GS
Tc = –25°C
vs. Drain Current
–10
–5
= –4 V
DS (on)
–2
–10 –20
–20
–3
–10 V
–50 –100
I
D
(A)
V
75°C
V
–4
GS
DS
–50 –100
25°C
(V)
(V)
–200
–5