si4410dy-02 NXP Semiconductors, si4410dy-02 Datasheet - Page 5

• Manufacturer Part Number: si4410dy-02
• Description: Si4410dy N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 08048
Product data
Symbol Parameter
Static characteristics
V
I
I
I
R
Dynamic characteristics
g
Q
Q
Q
Q
t
t
t
t
Source-drain (reverse) diode
V
t
DSS
GSS
D(on)
d(on)
r
d(off)
f
rr
j
fs
GS(th)
SD
DSon
g(tot)
g(tot)
gs
gd
= 25 C unless otherwise specified
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
On-state drain current
drain-source on-state resistance
forward transconductance
total gate charge
total gate charge
gate-source charge
gate-drain (Miller) charge
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
Characteristics
Conditions
I
V
V
V
V
V
V
I
I
V
I
D
D
D
S
S
DS
GS
DS
GS
GS
DS
DD
T
T
= 2.3A; V
= 2.3 A; dI
= 250 A; V
= 10 A; V
= 10 A; V
Rev. 02 — 05 July 2001
j
j
= 30 V; V
= 15 V; I
= 25 C
= 55 C
= 20 V; V
= 10 V; I
= 4.5 V; I
= 25 V; R
5; V
GS
GS
DD
DD
S
D
D
= 10 V
D
GS
/dt = 100 A/ s; V
D
N-channel enhancement mode field-effect transistor
DS
= 10 A;
= 10 A;
= 0 V;
= 15 V; V
= 15 V; V
DS
= 5 A;
= 25 ; V
= 0 V
= V
= 0 V
GS
Figure 13
Figure 7
Figure 11
Figure 7
; T
GS
GS
GS
j
= 25 C;
= 5 V;
= 10 V;
= 10 V; R
and
and
GS
Figure 14
Figure 14
= 0 V
8
Figure 9
8
G
= 6
© Philips Electronics N.V. 2001. All rights reserved.
Min
1
20
Si4410DY
Typ
11
15
34
21.5
40
8
7
13.5
9
70
30
0.7
50
Max
1
25
100
13.5
20
34
60
30
20
100
80
1.1
80
5 of 13
Unit
V
nA
A
m
m
S
nC
nC
nC
nC
ns
ns
ns
ns
V
ns
A
A