2sk2777 TOSHIBA Semiconductor CORPORATION, 2sk2777 Datasheet

2sk2777

Manufacturer Part Number

2sk2777

Description

N Channel Mos Type High Speed, High Current Switching Applications Chopper Regulator, Dc-dc Converter And Motor Drive Applications

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.2SK2777.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

2SK2777

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Current page: 1 of 6
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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

temperature

Characteristics

= 6 A

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)

= 90 V, T

Pulse (Note 1)

DC (Note 1)

= 20 kΩ)

: V

DSS

= 25°C (initial), L = 16.8 mH, R

(Note 2)

= 2.0~4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK2777

| = 5.5 S (typ.)

= 10 V, I

= 0.9 Ω (typ.)

−55~150

= 600 V)

Rating

Max

1.92

83.3

600

±30

345

150

6.5

= 1 mA)

= 25 Ω,

°C / W

Unit

°C

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

2-10S1B

2-10S2B

2006-11-08

―

2SK2777

Unit: mm

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