2sk3309 TOSHIBA Semiconductor CORPORATION, 2sk3309 Datasheet
2sk3309
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2sk3309 Summary of contents
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... D E 222 6 150 °C ch −55~150 T °C stg Symbol Max Unit R 1.92 °C/W th (ch-c) R 83.3 °C/W th (ch- Ω 2SK3309 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2006-11-06 ...
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... V I DSF /dt = 100 A/μ ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2SK3309 Min Typ. Max ⎯ ⎯ ±30 ⎯ ⎯ ⎯ 450 ⎯ 550 ⎯ 3.0 ⎯ 0.48 0.65 1.5 4.3 ⎯ 920 ⎯ ...
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... Drain-source voltage Gate-source voltage V 10 Common source Tc = 25°C Pulse test 1 0.1 100 1 3 2SK3309 I – Common source 25°C 9 Pulse test 8 – Common source Tc = 25°C ...
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... C iss −80 −40 1000 Dynamic input/output characteristics 500 400 300 200 100 0 200 0 4 2SK3309 I – −1 V −0.4 −0.6 −0.8 −1 −1.2 Drain-source voltage V ( – Common source ...
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... Pulse width t (S) w 400 300 200 100 Channel temperature (initial 1000 −15 V Test circuit = 25 Ω 3 2SK3309 – 100 125 150 (° VDSS Wave form ⎛ ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3309 20070701-EN 2006-11-06 ...