2sk3656 TOSHIBA Semiconductor CORPORATION, 2sk3656 Datasheet

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2sk3656

Manufacturer Part Number
2sk3656
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
2SK3656
Manufacturer:
toshiba
Quantity:
30 000
VHF- and UHF-band Amplifier Applications
Absolute Maximum Ratings
Marking
Caution: This device is sensitive to electrostatic discharge.
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Output power: P
Gain: G
Drain efficiency: η
Drain-source voltage
Gain-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Operating Ranges: 0~3.5V
Note 2: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Lot No.
P
Please make enough tool and equipment earthed when you handle.
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
= 15.4dB (typ)
Characteristics
1. Gate
2. Source
3. Drain
O
1
W
D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
=28.4dBmW (typ)
= 64% (typ)
2
C
3
Part No. (or abbreviation code)
V
(Ta = 25°C)
P
GSS
D
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Symbol
V
(Note 2)
T
T
DSS
(Note 1)
I
stg
D
ch
2SK3656
−45~150
Rating
150
7.5
3.5
0.5
3
1
Unit
°C
°C
W
V
V
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2-5K1D
SC-62
2007-11-01
2SK3656
Unit: mm

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2sk3656 Summary of contents

Page 1

... Symbol Rating Unit V 7.5 V DSS V (Note 1) 3.5 V GSS I 0 (Note 150 ° −45~150 °C stg A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2SK3656 Unit: mm ⎯ JEDEC JEITA SC-62 TOSHIBA 2-5K1D Weight: 0.05 g (typ.) 2007-11-01 ...

Page 2

... VSWR LOAD 10:1 all phase = 3 mA idle L1: φ0.6 mm enamel wire, 5.5ID, 5T L2: φ0.6 mm enamel wire, 5.5ID 2SK3656 Min Typ. Max ⎯ 27.5 28.4 = adjust), ⎯ ⎯ ⎯ 15.4 ⎯ 0.2 1 ⎯ ⎯ ⎯ ...

Page 3

... Iidle=50mA (dB) η (%) 50 0 4.5 5 -10 3 2SK3656 Gp, η D -Iidle Gp (dB) η (%) 100 GATE IDLE CURRENT Iidle(mA) Pi-Idd Iidle=30mA Iidle=50mA Iidle=70mA - INPUT POWER Pi(dBmW) Po-Pi Vdd=3.0V Vdd=3.6V Vdd=4. ...

Page 4

... Pi-Idd 400 f =470MHz Iidle=50mA 350 300 250 200 150 100 INPUT POWER Pi(dBmW) Note 4: These are only typical curves and devices are not necessarily guaranteed at these curves. Vdd=3.0V Vdd=3.6V Vdd=4. 2SK3656 2007-11-01 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SK3656 20070701-EN GENERAL 2007-11-01 ...

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