2sk3497 TOSHIBA Semiconductor CORPORATION, 2sk3497 Datasheet
2sk3497
Manufacturer Part Number
2sk3497
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SK3497.pdf
(3 pages)
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Price
Company:
Part Number:
2SK3497
Manufacturer:
TOSHIBA
Quantity:
3 400
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Part Number:
2sk3497(F)
Manufacturer:
AVAGO
Quantity:
36 700
High Power Amplifier Application
Absolute Maximum Ratings
Thermal Characteristics
High breakdown voltage: VDSS = 180V
Complementary to 2SJ618
Drain−source voltage
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
DC
Pulse (Note 1)
(Note 1)
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
V
V
T
I
T
P
GSS
DSS
I
DP
stg
D
ch
D
2SK3497
−55~150
Rating
Max
0.96
180
±12
130
150
10
30
50
1
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
A
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
1
2-16C1B
2006-11-20
―
―
2SK3497
2
3
Unit: mm
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2sk3497 Summary of contents
Page 1
... 130 150 ° −55~150 °C stg Symbol Max Unit R 0.96 ° (ch− ° (ch−a) 1 2SK3497 Unit GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ 2006-11-20 ...
Page 2
... (ON iss MHz rss C oss 2 2SK3497 Min Typ. Max Unit — — 10 μA — — 100 μA 180 — — V 1.1 — 2.1 V — — 0.75 V 6.0 12.0 — S — ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SK3497 20070701-EN 2006-11-20 ...