2sk3440 TOSHIBA Semiconductor CORPORATION, 2sk3440 Datasheet - Page 5

• Manufacturer Part Number: 2sk3440
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

500
300
100
50
30
10
5
3
1
1
*: Single nonrepetitive pulse
Curves must be derated
I D max (pulsed) *
I D max (continuous)
Tc = 25°C
linearly with increase in
temperature
Drain-source voltage V
DC operation
3
0.01
0.1
10
Safe operating area
10 μ
1
0.01
0.05
0.02
0.2
0.1
Duty = 0.5
Single pulse
10
1 ms *
100 μ
100 μs *
DS
30
(V)
1 m
100
Pulse width t
r
th
10 m
– t
5
w
R
V
w
DD
G
(s)
= 25 Ω
1000
= 50 V, L = 350 μH
800
600
400
200
100 m
0
15 V
25
0 V
P DM
Test circuit
Channel temperature (initial) T
Duty = t/T
R th (ch-c) = 1.0°C/W
50
t
1
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
10
2
1
Waveform
VDSS
I
⋅
AR
L
⋅
2 I
ch
⋅
125
⎛
⎜
⎜
⎝
B VDSS
(°C)
V
DS
2006-11-17
B VDSS
2SK3440
150
−
V DD
⎞
⎟
⎟
⎠